Reaction between amorphous Si and crystalline Al in Al/Si and Si/Al bilayers: microstructural and thermodynamic analysis of layer exchange

Abstract

Aluminium-induced crystallization of amorphous silicon (a-Si) in Al/Si and Si/Al bilayers was studied upon annealing at 250 °C by X-ray diffraction and Auger electron spectroscopy. The Al/a-Si bilayers and a-Si/Al bilayers were prepared by sputter deposition on single-crystal silicon wafers with a silicon-oxide film on top. During the isothermal annealing a layer-exchange process occurred in both types of bilayers. A continuous polycrystalline silicon (poly-Si) film was formed within, and thereby gradually replacing, the initial Al metal layer. The sublayer sequence in the original bilayer influenced the speed of the poly-Si formation and the layer-exchange process. After annealing, the Al fiber texture in the as-deposited bilayers had become stronger, the Al crystallites had grown laterally, and the macrostress in the Al layer had been released. The amorphous Si layer had crystallized into an aggregate of nanocrystals with {111} planes parallel to the surface, with a crystallite size of about 15–25 nm. An extensive analysis of the Gibbs energy change due to annealing showed that the layer exchange may be promoted by the release of elastic energy and grain growth for the Al phase.