Abstract
Thin films of anthracene (C14H10) have been grown by matrix-assisted pulsed-laser evaporation. Frozen solutions of 2 wt % anthracene (solute) in ortho-xylene or in chloroform were used as targets and were irradiated by a frequency-quadrupled Nd:YAG laser (266 nm). The deposited films were studied by the complementary use of infrared absorption and photoluminescence emission. The vibrational bands and fluorescence emission of bulk anthracene were clearly identified in the films. This means that the organic molecules were not modified by photochemical reactions during the laser irradiations, despite the strong absorption of anthracene at 266 nm. Among the growth parameters, the laser fluence was found to be critical in order to avoid the fragmentation of the anthracene molecules. The results show that matrix-assisted pulsed-laser evaporation is suitable for growing thin films of organic materials even if they absorb at the irradiating wavelength.
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81.15.Fg; 78.55.Kz; 33.20.Ea; 71.20.Rv
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Gutierrez-Llorente , A., Perez-Casero , R., Pajot , B. et al. Growth of anthracene thin films by matrix-assisted pulsed-laser evaporation. Appl Phys A 77, 785–788 (2003). https://doi.org/10.1007/s00339-003-2147-z
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DOI: https://doi.org/10.1007/s00339-003-2147-z