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Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN

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Abstract

The contacts of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au films deposited on n-GaN were studied by current–voltage (I–V) and transmission-line-method measurements. The effect of annealing temperature on specific contact resistivity has been investigated by changing the annealing temperature from 400 to 900 °C. Ti/Al/Au and Ti/Al/Ni/Au films were superior to the bilayer (Ti/Au) in ohmic contact characteristics and thermal stability. The Ti/Al/Ni/Au composite showed the best thermal stability due to the fact that Ni plays a more important role than the alloy of Ti/Al in preventing the interdiffusion of Ti, Al, and Au. The lowest contact resistivity (∼10-7Ω cm2) to n-GaN was obtained for the Ti/Al/Ni/Au sample by short-time/high-temperature annealing. The formation mechanism of ohmic contacts to n-GaN is also discussed.

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Authors and Affiliations

  1. National Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, 100871, Beijing, China

    Z.X. Qin, Z.Z. Chen, Y.Z. Tong, X.M. Ding, X.D. Hu, T.J. Yu & G.Y. Zhang

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  1. Z.X. Qin
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  2. Z.Z. Chen
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  4. X.M. Ding
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  6. T.J. Yu
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Correspondence to Z.X. Qin.

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PACS

73.40.Cg; 73.61.Ey

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Qin, Z., Chen, Z., Tong, Y. et al. Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN. Appl Phys A 78, 729–731 (2004). https://doi.org/10.1007/s00339-002-1989-0

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  • DOI: https://doi.org/10.1007/s00339-002-1989-0

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