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A study of deposition rate and characterization of bn thin films prepared by cvd

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Abstract

Triethylboron (TEB) and ammonia were employed as precursors in preparation of boron nitride thin films on Si(100) substrate by CVD. Operating parameters such as reactor pressure and feed rates of gases were varied to investigate their effects on deposition rate and film characteristics. Total gas pressure in the reactor was varied from near atmospheric to near 1 torr. Deposition temperature was in the range of 850-1,100‡C. Deposition rate increased with increase of partial pressure of TEB, but decreased with increase of total pressure in the reactor. Deposited films were examined with SEM, FTIR, XPS, AES and XRD. Films were BN of turbostratic structure and their texture and carbon content varied with deposition conditions.

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Authors and Affiliations

  1. Division of Chemical Engineering, Korea Institute of Science and Technology, PO Box 131, Cheongryang, Seoul, Korea

    Yong-Gi Jin, Sang-Yeol Lee, Young-Woo Nam, Joong Kee Lee & Dalkeun Park

  2. Soong-sil University, Seoul, Korea

    Young-Woo Nam

Authors
  1. Yong-Gi Jin
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  2. Sang-Yeol Lee
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  3. Young-Woo Nam
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  4. Joong Kee Lee
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  5. Dalkeun Park
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Corresponding author

Correspondence to Dalkeun Park.

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Jin, YG., Lee, SY., Nam, YW. et al. A study of deposition rate and characterization of bn thin films prepared by cvd. Korean J. Chem. Eng. 15, 652–657 (1998). https://doi.org/10.1007/BF02698993

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  • DOI: https://doi.org/10.1007/BF02698993

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