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p-to-n type-conversion mechanisms for HgCdTe exposed to H2/CH4 plasmas

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Abstract

The role of hydrogen incorporation in H2/CH4 reactive ion etching (RIE) induced type-conversion of p-type HgCdTe is investigated. A model is proposed in which hydrogen is incorporated into the HgCdTe crystal lattice in at least three different forms. It is proposed that the junction formation mechanism is a mixture of RIE-induced damage and Hg interstitial formation to which hydrogen forms strong bonds, and hydrogen-induced neutralization of acceptors. Confirmation of the model is presented based on experimental secondary ion mass spectroscopy of RIE-induced junctions, transport measurements reported previously, and initial diode bake stability testing.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, The University of Western Australia, 6907, Nedlands, W.A., Australia

    J. White, J. M. Dell, C. A. Musca, J. Antoszewski & L. Faraone

  2. Solid State Physics Laboratory, Lucknow Road, Delhi, India

    R. Pal

  3. Australian Nuclear Science and Technology Organisation, New Illawarra Road, 2234, Lucas Heights, NSW, Australia

    P. Burke

Authors
  1. J. White
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  2. R. Pal
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  3. J. M. Dell
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  4. C. A. Musca
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  5. J. Antoszewski
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  6. L. Faraone
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  7. P. Burke
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White, J., Pal, R., Dell, J.M. et al. p-to-n type-conversion mechanisms for HgCdTe exposed to H2/CH4 plasmas. J. Electron. Mater. 30, 762–767 (2001). https://doi.org/10.1007/BF02665869

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  • DOI: https://doi.org/10.1007/BF02665869

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