Molecular beam epitaxial regrowth of InAs/AiSb/GaSb heterostructures on patterned substrates

Abstract

The molecular beam epitaxial growth of InAs/AISb/GaSb heterostructures on GaSb epilayers patterned by dry etching is investigated. Faceted growth occurs at pattern edges, depending on the adatom species, crystallographic planes and growth parameters. The morphology of the overgrown structure is determined by (111), (110), and (100) Planes near the edges of the patterned stripes, oriented in the [011], [001 ], or [0 11] direction. During the regrowth of InAs, additional (311)A planes are formed at the edges for stripe orientations in the [0 11] direction. Utilizing the faceted growth behavior at pattern edges, resonant interband tunneling diodes with a room temperature peak-to-valley current ratio of 13 have been fabricated on patterned substrates. The results indicate that this approach has the potential of realizing advanced devices with higher complexity.