Abstract
Langmuir probe measurements of plasma density and electron temperature have been used to investigate the reaction kinetics in remote plasma-enhanced chemical vapor deposition (RPCVD) of Si on Si (100) substrates. The increased growth rate for negative substrate bias indicates that positively charged ions are involved in the deposition reaction. A comparison of growth rate and plasma density data indicates that the growth rate is proportional to the ion flux. It is concluded that the rate limiting reaction in RPCVD is H desorption from the hydrogenated Si surface by ion bombardment.
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Anthony, B., Hsu, T., Qian, R. et al. The use of langmuir probe measurements to investigate the reaction mechanisms of remote plasma-enhanced chemical vapor deposition. J. Electron. Mater. 20, 309–313 (1991). https://doi.org/10.1007/BF02657896
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DOI: https://doi.org/10.1007/BF02657896