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The behaviour of ZrB x (0 ≤x ≤ 2) thin films deposited on si substrate as a function of annealing treatment

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Abstract

Thin films of ZrB x (0 ≤x ≤ 2) have been deposited on Si substrates by dc magnetron sputtering. The effects of annealing the films have been studied as a function of film composition by sheet resistance measurements, supplemented by Rutherford backscat-tering, Auger electron spectroscopy and x-ray diffraction. Significant departures of film composition from stoichiometric ZrB2 can result in an accompanying Zr-Si reaction cou-ple during annealing treatment which influences the overall film behaviour. These ef-fects are discussed with respect to the possible usefulness of ZrB2 films for VLSI metalli-sation and barrier layer applications.

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Author notes

  1. S. J. Wright

    Present address: Materials and Components Centre, British Telecom, 310 Bordesley Green, B9 5NF, Birmingham, UK

Authors and Affiliations

  1. Department of Metallurgy and Materials, University of Birmingham, B15 2TT, Birmingham, UK

    C. Y. Tay & I. R. Harris

  2. British Telecom Research Laboratories, Martlesham Heath, IP5 7RE, Ipswich, UK

    S. J. Wright

Authors
  1. C. Y. Tay
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  2. I. R. Harris
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  3. S. J. Wright
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Tay, C.Y., Harris, I.R. & Wright, S.J. The behaviour of ZrB x (0 ≤x ≤ 2) thin films deposited on si substrate as a function of annealing treatment. J. Electron. Mater. 18, 511–516 (1989). https://doi.org/10.1007/BF02657781

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  • DOI: https://doi.org/10.1007/BF02657781

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