Abstract
Titanium diboride (TiB2) plates (about 1 mm maximum thickness) were prepared by chemical vapour deposition (CVD) using a TiCl4, B2H6 and H2 system at deposition temperatures,T dep of 1323–1773 K. The B/Ti atomic ratio in the deposits was 2, and the composition is strictly stoichiometric. Chlorine was not detected. The measured lattice parameters werea=0.3029 nm andc=0.3229 nm. Density is in close agreement with the theoretical value (4.50 g cm−3). Preferred orientation of the CVD TiB2 plates varies mainly with total gas pressures,P tot. AtP tot=4 kPa the (1 0 0) plane and atP tot=40 kPa the (1 1 0) plane is preferably oriented parallel to the substrates. The effect ofP tot on the preferred orientation is discussed thermodynamically, and explained by supersaturation in the gas phase.
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References
A. J. Becker andJ. H. Blanks,Thin Solid Films 119 (1984) 241.
H. O. Pierson andE. Randich, in “Proceedings of the 6th International Conference on Chemical Vapor Deposition”, Atlanta, October 1977, edited by L. F. Donaghey, P. Rai-Choudhury and R. N. Tauber (Electrochemical Society, Princeton, 1977) p. 304.
A. D. McLeod, J. S. Haggerty andD. R. Sadoway,J. Amer. Ceram. Soc. 67 (1984) 705.
S. Motojima, M. Yamada andK. Sugiyama,J. Nucl. Mater. 105 (1982) 335.
T. M. Besmann andK. E. Spear,J. Crystal Growth 31 (1985) 60.
A. J. Caputo, W. J. Lackey, I. G. Wright andP. Angelini,J. Electrochem. Soc. 132 (1985) 2274.
J. J. Gebhardt andR. F. Cree,J. Amer. Ceram. Soc. 48 (1965) 262.
R. E. Gannon, R. C. Folweiler andT. Vasilos,ibid. 46 (1963) 496.
T. Takahashi andH. Kamiya,J. Crystal Growth 26 (1974) 203.
T. Takahashi andH. Itoh,ibid. 49 (1980) 445.
G. Blandenet, Y. Lagarde, J. P. Morlevay andG. Uny, in “Proceedings of the 6th International Conference on Chemical Vapor Deposition”, Atlanta, October 1977, edited by L. F. Donaghey, P. Rai-Choudhury and R. N. Tauber (Electrochemical Society, Princeton, 1977) p. 330.
H. O. Pierson andA. W. Mullendore,Thin Solid Films 95 (1982) 99.
Idem, ibid. 72 (1980) 511.
M. Mukaida, T. Goto andT. Hirai,J. Mater. Sci. 25 (1990) 1069.
T. M. Besmann, ORNL/TM-5775 (April 1977).
“JANAF Thermochemieal Tables”, 2nd Edn, No. NSRDS-NBS-37, edited by D. R. Stull and H. Prophet, US Government Printing Office, Washington, DC (1971).
“Powder Diffraction File”, JCPDS International Centre for Diffraction Data, File No. 35-741.
H. O. Pierson, in “Chemically Vapor Deposited Coatings”, edited by H. O. Pierson (American Ceramic Society, Chicago, 1981) p. 27.
D. R. Stern andL. Lynds,J. Electrochem. Soc. 105 (1953) 676.
H. O. Pierson andA. W. Mullendore, in “Proceedings of the 7th International Conference on Chemical Vapor Deposition”, Los Angeles, October 1979, edited by T. O. Sedgwick and H. Lydtin (Electrochemical Society, Princeton, 1979) p. 360.
F. K. Lotgering,J. Inorg. Nucl. Chem. 9 (1959) 113.
N. A. Pangarov,Electrochem. Acta 9 (1964) 721.
C. S. Park, J. G. Kim andJ. S. Chun,J. Electrochem. Soc. 130 (1983) 1607.
T. Goto, J. Tsunenoshi, T. Hirai andY. Kaya,J. Mater. Sci. in press.
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Mukaida, M., Goto, T. & Hirai, T. Preferred orientation of TiB2 plates prepared by CVD of the TiCl4 + B2H6 system. J Mater Sci 26, 6613–6617 (1991). https://doi.org/10.1007/BF02402653
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DOI: https://doi.org/10.1007/BF02402653