Quantum tunneling of light particles in metals

Abstract

The motion of a particle in a metallic crystal is studied for low temperatures where transitions between adjacent interstitial sites are caused by quantum tunneling. The influence of electrons and phonons on the hopping rate is taken into account by means of a functional integral method. The electronic influence may effectively be described by Ohmic damping which dominates the low temperature behavior of the defect motion. When subsequent tunneling transitions are statistically independent, the diffusion constant is found to obey a power law, D∼T^2K−1, where K depends on the defect-electron interaction. This power law is limited at low temperatures by the effects of phonon excitations. Near the transition between electron and phonon dominated behavior the diffusion constant has a minimum where the precise temperature dependence of the rate depends not only on phonon spectra but also on the processes limiting phonon lifetimes.