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Relaxation of pseudo-Jahn-Teller centers in SiO2

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Czechoslovak Journal of Physics B Aims and scope

Abstract

Potential energy profiles for strongly relaxed defects in SiO2 are interpreted in terms of a pseudo-Jahn-Teller effect. Defect conversion rates involving tunelling transitions betveen energy minima are calculated using a reaction-rate method. Obtained relaxation time vs. temperature dependences call for further thermal bleaching experiments.

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Authors and Affiliations

  1. Institute of Solid State Physics, Bulgarian Acad. Sci., 72 Lenin Blvd., 1784, Sofia, Bulgaria

    M. Georgiev & A. Manov

Authors
  1. M. Georgiev
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  2. A. Manov
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Additional information

An invited paper for the International Symposium on Physics of Defect Centres — PDC '86 — September 22–26, 1986, Bechyně, Czechoslovakia.

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Georgiev, M., Manov, A. Relaxation of pseudo-Jahn-Teller centers in SiO2 . Czech J Phys 38, 83–96 (1988). https://doi.org/10.1007/BF01596522

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  • DOI: https://doi.org/10.1007/BF01596522

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