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On the recombination behaviour of iron in moderately boron-doped p-type silicon

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Abstract

The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atE v +0.1 eV and the donor level of FeB pairs atE c -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014–1016 cm−3 supposing theE c -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.

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Authors and Affiliations

  1. LETI (CEA-Technologies Avancées) MEL-CENG, 17 rue des Martyrs, F-38054, Grenoble Cedex 9, France

    D. Walz & J. -P. My

  2. LPCS-ENSERG, 23 rue des Martyrs, F-38016, Grenoble Cedex 1, France

    G. Kamarinos

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  1. D. Walz
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  2. J. -P. My
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  3. G. Kamarinos
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Walz, D., My, J.P. & Kamarinos, G. On the recombination behaviour of iron in moderately boron-doped p-type silicon. Appl. Phys. A 62, 345–353 (1996). https://doi.org/10.1007/BF01594232

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