Abstract
A substantial difference in electron recombination cross sections on Fe-B complexes (σ1) and on activated iron ions (σ2) in boron-doped single-crystal silicon is used to independently determine the lifetime of electrons in the standard T st using the surface photo-emf method. Pairs of values of the lifetime T 1 and T 2 before and after the decomposition of the Fe-B complexes were measured for each of 600 ingots at arbitrary diffusion length L cal for the calibrating specimen and were placed on the plane (T 1, T 2). At the boundary of the region filled with the points, ingots are presented that are only contaminated with iron ions, so that T 2/T 1 = σ1/σ2. The true values of L st and T st of the calibrating specimen and the ratio σ1/σ2 = 12.5 ± 0.5 are determined by selecting a new value of the diffusion length for the calibrating specimen, which straightens the boundary of the region filled with the points after the recalculation of the values of T 1 and T 2.
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Original Russian Text © V.A. Skidanov, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 21, pp. 46–53.
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Skidanov, V.A. Absolute standard of diffusion length and lifetime of minority charge carriers in single-crystal silicon. Tech. Phys. Lett. 40, 957–960 (2014). https://doi.org/10.1134/S1063785014110121
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DOI: https://doi.org/10.1134/S1063785014110121