Abstract
The size-dependent melting temperature has been shown for the group IV semiconductor silicon. A cursory comparison is made between silicon nanocrystal melting and that observed in the group II–VI material Cds and the group III–V material GaAs. Particles dispersed at a number density such that there are interactions between nanocrystals are observed to sinter before size-dependent melting occurs. Using an electron beam to selectively remove an organic mask from a substrate, this phenomenon is exploited to produce thin-film structures. This work has implications in the production of nanoelectronics, nonlinear optics and solar conversion technologies.
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