Zur Bildungskinetik der F-Folgezentren in KCl

Abstract

Following the same procedure as in part I the formation of Z₁-centers under Flight irradiation was investigated in additively colored KCl crystals doped with Ca⁺⁺ and Sr⁺⁺ ions. The measurements show that again F′-centers and empty anion vacancies are the first reaction product and determine the rate of Z₁-center formation. The temperature dependence and rate of the Z₁-center formation is in agreement with the corresponding results on F _A -center formation, demonstrating that Z₁-centers are formed as the consequence of an ionic process and not a mere electronic transfer. It is concluded that again empty anion vacancies or F′ centers diffuse randomly in the lattice (activation energy 0.6 eV) until they are captured at an impurity site. Arguments are presented that these impurities are divalent cation/vacancy complexes, so that the model of the Z₁-center should be a combination of the F-center with this complex. The independence of the Z₁-band of the nature of the divalent cation indicates the assoziation of the F-center to the vacancy-side of the complex.

A characteristic delay period in the Z₁-center formation can be accounted for by a non-statistical distribution of F-centers and divalent cations to each other. This is a necessary consequence of the high temperature dynamical equilibrium between these imperfections which is frozen in by the quenching of additively colored crystals. A direct proof for this interpretation is the absence of the delay period in crystals where the F-centers are formed by x-irradiation at room temperature.