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Electric field effect on superconducting YBa2Cu3O7−δ films

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Zeitschrift für Physik B Condensed Matter

Abstract

Experimental evidence for a significant electric field effect in thin superconducting films of YBa2Cu3O7−δ is presented. MISFET-type structures have been developed which allow the application of electric fields larger than 4×106 V/cm across insulating SrTiO3 barriers into thin cpitaxial YBa2Cu3O7−δ channel layers. The results demonstrate that with these structures the electrical resistivity aboveT c (R=0) and the density of free carriers in the YBa2Cu3O7−δ films can be modified by 1–2% with gate voltages smaller than 50 V.

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Authors and Affiliations

  1. Zürich Research Laboratory, IBM Research Division, Säumerstrasse 4, CH-8803, Rüschlikon, Switzerland

    J. Mannhart, J. G. Bednorz, K. A. Müller & D. G. Schlom

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  1. J. Mannhart
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  2. J. G. Bednorz
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  3. K. A. Müller
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  4. D. G. Schlom
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Mannhart, J., Bednorz, J.G., Müller, K.A. et al. Electric field effect on superconducting YBa2Cu3O7−δ films. Z. Physik B - Condensed Matter 83, 307–311 (1991). https://doi.org/10.1007/BF01313398

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  • DOI: https://doi.org/10.1007/BF01313398

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