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Focusing of dispersive phonons in GaAs

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Zeitschrift für Physik B Condensed Matter

Abstract

The ballistic propagation of highly dispersive phonons in GaAs in analyzed with both a bond-charge model (BCM) and a shell model, and compared to imaging experiments. When scattering is neglected, both models predict dispersive focusing pattern which depend strongly on the selected group velocities. In contrast, velocity-selected phonon images obtained with a PbBi tunnel-junction detector on a 0.7-mm thick crystal, display well-defined caustic lines whose angular positions do not shift at longer delay times. When isotope scattering is considered in the calculation, however, the shell model reproduces the experimental focusing structures remarkably well.

For highly dispersive phonons, the bond-charge and shell models predict markedly different phonon-focusing patterns. In particular, a concentration of heat flux along [100] is predicted by BCM forv=1.7–2.0 THz slow-transverse (ST) phonons., but this effect is absent in the shell model. Both models predict new focusing structures in the fasttransverse (FT) mode at high frequencies. Our calculations which include isotope scattering indicate that to observe these new structures considerable technical advances are required in the phonon-imaging experiments.

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Hebboul, S.E., Wolfe, J.P. Focusing of dispersive phonons in GaAs. Z. Physik B - Condensed Matter 74, 35–51 (1989). https://doi.org/10.1007/BF01307237

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