Abstract
The yields of SOF4, SO2F2, SOF2, and SO2 have been measured as a function of O2 content in SF6/O2 mixtures, following spark discharges. All experiments were made at a spark energy of 8.7 J/spark, a total pressure of 133 kPa, and for O2 additions of 0, 1, 2, 5, 10, and 20% to SF6. Even for the case of no added O2, trace amounts of O2 and H2O result in the formation of the above by-products. However, addition of O2 significantly increases the yields of SOF4 and SO2F2, while SOF2 is only slightly affected. The net yields for SOF4 and SO2F2 formation range from 0.18×10−9 and 0.64×10−10 mol·J−1, respectively, at 1% O2 content to 10.45×10−9 and 7.15×10−10 mol·J−1, respectively, at 20% O2 content. The mechanism for SOF4 production appears to involve SF4, an important initial product of SF6, as a precursor. Comparison of the SOF4 and SO2F2 yield from spark discharges (arc and corona) shows that the yields from other discharges (arc and corona) shows that the yields can vary by at least three orders of magnitude, depending on the type of discharge and on other discharge parameters.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R. J. Van Brunt,J. Res. Natl. Bur. Stand. 90, 229–253 (1985).
R. J. Van Brunt and M. C. Siddagangappa,Plasma Chem. Plasma Process. 8, 207 (1988).
R. J. Van Brunt, L. W. Sieck, I. Sauers, and M. C. Siddagangappa,Plasma Chem. Plasma Process. 8, 225 (1988).
R. J. Van Brunt, J. T. Herron, and C. Fenimore, inGaseous Dielectrics V, Proc. 5th Int. Symp. on Gaseous Dielectrics, L. G. Christophorou, ed., Pergamon Press, New York (1987).
C. C. Tang and D. W. Hess,J. Electrochem. Soc. 131, 115–120 (1984).
G. Turban and M. Rapeaux,J. Electrochem. Soc. 130, 2231–2236 (1983).
R. W. Light and H. B. Bell,J. Electrochem. Soc. 130, 1567–1571 (1983).
I. Sauers, H. W. Ellis, and L. G. Christophorou,IEEE Trans. Electr. Insul. EI-21, 111–120 (1986).
I. Sauers, J. L. Adcock, L. G. Christophorou, and H. W. Ellis,J. Chem. Phys. 83, 2618–2619 (1985).
R. J. Van Brunt and I. Sauers,J. Chem. Phys. 85, 4377–4380 (1986).
B. Dumax, A. Czernickowski, J-M. Cormier, and J. Chapelle,Rev. Gen. Electr. 88, 506–511 (1979).
H. Motschmann,Z. Phys. 191, 10–23 (1966).
E. Schulz-Gulde,J. Phys. D; Appl. Phys. 13, 793–803 (1980).
H. Dienemann,J. Phys. D: Appl. Phys. 16, 1651–1671 (1983).
J. Chapelle,Rev. Gen. Electr. 86, 841–845 (1977).
L. C. Frees, I. Sauers, H. W. Ellis, and L. G. Christophorou,J. Phys. D: Appl. Phys. 14, 1629–1642 (1981).
A. Picard, G. Turban, and B. Grolleau,J. Phys. D: Appl. Phys. 19, 991–1005 (1986).
W. Frie,Z. Phys. 201, 269–294 (1967).
P. Swarbrick,Br. J. Appl. Phys. 18, 419–426 (1967).
K. P. Brand and J. Kopainsky,Appl. Phys. 16, 425–432 (1978).
M. C. Siddagangappa and R. J. Van Brunt,Proc. 8th Int. Conf. on Gas Discharges and Their Applications, Leeds University Press, London (1985), pp. 247–250.
M. C. Siddagangappa, R. J. Van Brunt, and A. V. Phelps,Bull. Am. Phys. Soc. 31, 145 (1986).
I. C. Plumb and K. R. Ryan,Plasma Chem. Plasma Process. 6, 247–258 (1986).
J. T. Herron,Int. J. Chem. Kinet. 19, 129–142 (1987).
M. Schmidt and W. Siebert, inComprehensive Inorganic Chemistry, J. C. Bailar, Jr., H. J. Emlius, Ronald Nyholm, and A. F. Trotman-Dickenson, eds., Pergamon Press, London (1973), Vol. 2, p. 845.
C. Boudene, J-L. Cluet, G. Kreib, and G. Wind,Rev. Gen. Electr. 45–78 (June 1974).
J. Castonguay, Conf. Record IEEE Int. Symposium on Electrical Insulation, Boston, 1980.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sauers, I. By-product formation in spark breakdown of SF6/O2 mixtures. Plasma Chem Plasma Process 8, 247–262 (1988). https://doi.org/10.1007/BF01016160
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF01016160