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Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy

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Abstract

p/n junctions in Ge-doped GaAs consisting ofp-type layers with extremely smooth surfaces and low compensationn-type layers were fabricated by molecular beam epitaxy (MBE). During growth the site occupancy of Ge was controlled by varying the substrate temperature fromT s <500°C (n-type layers) toT s >600°C (p-type layers) at aconstant As4 to Ga flux ratio of 2. This yields stable growth conditions for the generation of Ga and As vacancies, respectively.

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Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-7000, Stuttgart 80, Fed. Rep. Germany

    K. Ploog, A. Fischer & H. Künzel

Authors
  1. K. Ploog
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  2. A. Fischer
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  3. H. Künzel
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Ploog, K., Fischer, A. & Künzel, H. Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy. Appl. Phys. 18, 353–356 (1979). https://doi.org/10.1007/BF00899688

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  • DOI: https://doi.org/10.1007/BF00899688

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