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Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition

  • XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019
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Abstract

n+-Ge/p+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the n+-Ge layers with a donor impurity (P) to a concentration of >1 × 1019 cm–3 is performed via the thermal decomposition of GaP. Distinct regions of the negative differential resistance are observed in the current–voltage characteristics of tunnel diodes.

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Funding

This study was performed in the scope of the state order of the Ministry of Education and Science of the Russian Federation, state contract no. 16.7443.2017/BCh, and supported by the Russian Scientific Foundation, project no. 18-72-10061 (investigation into the electrical parameters of heavily doped n+-Ge:P layers).

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Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    V. G. Shengurov, D. O. Filatov, S. A. Denisov, V. Yu. Chalkov, N. A. Alyabina & A. V. Zaitsev

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  1. V. G. Shengurov
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  2. D. O. Filatov
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  3. S. A. Denisov
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  4. V. Yu. Chalkov
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  5. N. A. Alyabina
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  6. A. V. Zaitsev
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Corresponding author

Correspondence to V. G. Shengurov.

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The authors declare that they have no conflict of interest.

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Translated by N. Korovin

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Shengurov, V.G., Filatov, D.O., Denisov, S.A. et al. Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition. Semiconductors 53, 1238–1241 (2019). https://doi.org/10.1134/S1063782619090203

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  • DOI: https://doi.org/10.1134/S1063782619090203

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