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Energy-band structure of semiconductors having the chalcopyrite lattice II. MgSiP2, ZnGeP2, ZnSiAs2, and CdSiP2

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Abstract

The pseudopotential method is used to calculate the band structure of MgSiP2, ZnGeP2, ZnSiAs2, and CdSiP2. The valence band of these compounds is shown to consist of several allowed subbands separated by energy gaps. There are two levels at the top of the valence band, slightly separated in ZnGeP2 and ZnSiAs2 and well-separated in MgSiP2 and CdSiP2 — in which there is significant tetragonal compression of the lattice. The effective electron masses at the bottom of the conduction band turn out to be anisotropic, with m∥/m⊥ ∼ 7–10.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, USSR

    A. S. Poplavnoi, Yu. I. Polygalov & V. A. Chaldyshev

Authors
  1. A. S. Poplavnoi
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  2. Yu. I. Polygalov
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  3. V. A. Chaldyshev
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 95–100, June, 1970.

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Poplavnoi, A.S., Polygalov, Y.I. & Chaldyshev, V.A. Energy-band structure of semiconductors having the chalcopyrite lattice II. MgSiP2, ZnGeP2, ZnSiAs2, and CdSiP2 . Soviet Physics Journal 13, 766–770 (1970). https://doi.org/10.1007/BF00836698

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  • DOI: https://doi.org/10.1007/BF00836698

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