Abstract
The electrical resistance and absolute thermoelectric power (TEP) have been measured for GdB6 and DyB6 in the temperature range 2–30 K. The compounds GdB6 and DyB6 order antiferromagnetically atT N ≃ 15.2 and 20.3 K, respectively. Above the Néel temperature the resistivity has a small contribution that is linear inT due to electron-phonon scattering, whereas in the same temperature range the spin-disorder TEP (S spd) has been evaluated and found to be linear inT. A divergence in the temperature derivative of resistance and TEP has been found atT N that is consistent with the present theories. There is evidence of a low-temperature phase appearing at ∼ 7 K in the resistivity and the TEP data of GdB6. A minimum in the TEP is found in these compounds below ∼ 6 K, which is associated mainly with phonon drag and possibly a magnon contribution. A broad peak in the TEP of DyB6 around ∼ 16 K is thought to be due to crystalline electric field effects.
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Ali, N., Woods, S.B. Transport properties of GdB6 and DyB6 . J Low Temp Phys 56, 575–584 (1984). https://doi.org/10.1007/BF00681812
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DOI: https://doi.org/10.1007/BF00681812