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Temperature dependence of the saturation magnetization of ion-implanted YIG films

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Abstract

The temperature dependence of the saturation magnetization of a series of ionimplanted YIG films is presented. The films were implanted with neon ions at an energy of 450 keV; the dose ranged from 2 to 5*1014 ions/cm2. The experimental data can be described by the molecular field theory showing that the ion-implanted part of the film can be approximated as consisting of two regions each having their own magnetization and Curie temperature. The values of these magnetic parameters vary as a function of dose and differ strongly from the values for pure YIG.

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Authors and Affiliations

  1. Philips Research Laboratories, NL-5600, JA Eindhoven, The Netherlands

    H. A. Algra

  2. Philips Forschungslaboratorium Hamburg GmbH, D-2000, Hamburg 54, Fed. Rep. Germany

    P. Hansen

Authors
  1. H. A. Algra
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  2. P. Hansen
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Algra, H.A., Hansen, P. Temperature dependence of the saturation magnetization of ion-implanted YIG films. Appl. Phys. A 29, 83–86 (1982). https://doi.org/10.1007/BF00632432

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  • DOI: https://doi.org/10.1007/BF00632432

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