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Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

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Abstract

Using the hydrogen neutralization of the boron acceptor, the diffusion of hydrogen is investigated in the temperature range 20 °–160 °C. The hydrogenation is performed by low-energy implantation. We observe a fast initial hydrogen migration, followed by a long-time diffusion phase that is described by an effective diffusion coefficientD eff=D 0 eff exp(−E a/kT) withD 0 eff–cm2s−1 andE a=(0.83±0.05) eV. No deeper hydrogen migration is detected for implantation times longer than − 30 min. Our data are explained by the build-up of a large amount of molecular hydrogen beneath the surface, which strongly hinders the transfer of the implanted hydrogen to the bulk. The thermal reactivation kinetics of the neutralized boron show a rapid initial step followed by a longtime thermally activated second order phase, which is limited by the recombination of hydrogen into molecules.

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Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000, Stuttgart 80, Fed. Rep. Germany

    T. Zundel

  2. Centre de Recherches Nucléaires, Laboratoire de Physique et Applications des Semiconducteurs, (UA du CNRS 292), 23, Rue du Loess, F-67037, Strasbourg Cedex, France

    A. Mesli, J. C. Muller & P. Siffert

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  1. T. Zundel
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Zundel, T., Mesli, A., Muller, J.C. et al. Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation. Appl. Phys. A 48, 31–40 (1989). https://doi.org/10.1007/BF00617761

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