Abstract
The data on hydrogen in saturated/quenched samples and in samples exposed to plasma have been revisited. It is concluded that the monomeric hydrogen in intrinsic silicon is represented mostly by two neutral species: Hb (presumably a ground state of tetrahedral hydrogen) and Hs (a slow monomer in a different interstitial position). At high T these species are in equilibrium, with a concentration ratio close to 1. At lower T (at least at T ≤ 500 °C) they become independent one of the other. This conclusion differs from a conventional notion that considers bond-centred H+(BC) ions to be dominant in intrinsic Si. In p-Si, boron is passivated not only by H+(BC) ions (denoted H+(1)) but also by another kind of H+ denoted H+(2). A presence of several independent species (Hb, Hs, H+(1) and H+(2)) gives rise to a rich variety of hydrogen depth profiles in plasma-exposed silicon; these profiles are well reproduced by simulations.
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Voronkov, V.V. (2020). Hydrogen in Silicon: Evidence of Independent Monomeric States. In: Levchenko, E., Dappe, Y., Ori, G. (eds) Theory and Simulation in Physics for Materials Applications. Springer Series in Materials Science, vol 296. Springer, Cham. https://doi.org/10.1007/978-3-030-37790-8_12
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