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Determination of the entropy-factor of the gold donor level in silicon by resistivity and DLTS measurements

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The parameters of the gold donor level inp-type silicon are determined from the temperature dependence of the free carrier concentration and from DLTS measurements. The entropy-factorX T is determined to be 20±2. In addition, the capture cross-section for holes σ p =5.5×10−15 cm2 and the reaction enthalpyH T −H v =0.35eV for the exchange of holes between the gold donor level and the valence band are obtained in the present investigation.

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References

  1. D.V. Lang, H.G. Grimmeiss, E. Meijer, M. Jaros: Phys. Rev. B22, 3917 (1980)

    Google Scholar 

  2. R.H. Wu, A.R. Peaker: Solid-State Electron.25, 643 (1982)

    Google Scholar 

  3. H.J. Hoffmann: Appl. Phys.19, 307 (1979)

    Google Scholar 

  4. D.V. Lang: J. Appl. Phys.45, 3014 (1974)

    Google Scholar 

  5. D.V. Lang: InThermally Stimulated Relaxation in Solids, ed. by P. Bräunlich, Topics Appl. Phys.37 (Springer, Berlin, Heidelberg, New York 1979)

    Google Scholar 

  6. W. Shockley, W.T. Read, Jr.: Phys. Rev.87, 835 (1952)

    Google Scholar 

  7. R.N. Hall: Phys. Rev.87, 387 (1952)

    Google Scholar 

  8. H.G. Grimmeiss, E. Janzén, B. Skarstam: J. Appl. Phys.51, 3740 (1980)

    Google Scholar 

  9. H.G. Grimmeiss, L.-Å. Ledebo, E. Meijer: Appl. Phys. Lett.36, 307 (1980)

    Google Scholar 

  10. P. van Staa: Thesis, University of Münster (1983)

  11. H. Lefèvre, M. Schulz: Appl. Phys.12, 45 (1977)

    Google Scholar 

  12. Sheng S. Li: Solid-State Electron.21, 1109 (1978)

    Google Scholar 

  13. B. Brückner: Phys. stat. sol. (a)4, 685 (1971)

    Google Scholar 

  14. J.A. Pals: Solid-State Electron.17, 1139 (1974)

    Google Scholar 

  15. W. Mackert: Dipl. Thesis, University of Karlsruhe (1981) unpublished

  16. S.D. Brotherton, J.E. Lowther: Phys. Rev. Lett.44, 606 (1980)

    Google Scholar 

  17. J.M. Fairfield, B.V. Gokhale: Solid-State Electron.8, 685 (1965)

    Google Scholar 

  18. C.T. Sah, L. Forbes, L.L. Rosier, S.F. Tasch, Jr.: Solid-State Electron.13, 159 (1970)

    Google Scholar 

  19. W.D. Davis: Phys. Rev.114, 1006 (1959)

    Google Scholar 

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Authors and Affiliations

  1. Institut für Angewandte Physik, Universität, D-4400, Münster, Fed. Rep. Germany

    R. Kassing, L. Cohausz, P. van Staa, W. Mackert & H. J. Hoffman

  2. Institut für Angewandte Physik, Universität, D-7500, Karlsruhe 1, Fed. Rep. Germany

    W. Mackert & H. J. Hoffman

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  1. R. Kassing
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  2. L. Cohausz
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  3. P. van Staa
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  4. W. Mackert
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  5. H. J. Hoffman
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Kassing, R., Cohausz, L., van Staa, P. et al. Determination of the entropy-factor of the gold donor level in silicon by resistivity and DLTS measurements. Appl. Phys. A 34, 41–47 (1984). https://doi.org/10.1007/BF00617573

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  • DOI: https://doi.org/10.1007/BF00617573

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