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N-type PbS and PbS1−x Se x layers prepared by the hot-wall epitaxy

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Abstract

The control of the sulphur compensation during growth of high quality n-type epitaxial lead-salt films is described. The experimentally observed degree of compensation cannot be explained by the phase diagram. Quantitatively it agrees well with the partial dissociation of the lead-salt molecules originating from the evaporation source. The carrier type of the films has been found to depend on the substrate material. Representative results for PbS, BaF2 and NaCl substrates are summarized.

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Authors and Affiliations

  1. AEG - Telefunken Forschungsinstitut, Frankfurt, Germany

    M. Bleicher, H. -D. Wurzinger, H. Maier & H. Preier

Authors
  1. M. Bleicher
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  2. H. -D. Wurzinger
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  3. H. Maier
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  4. H. Preier
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Bleicher, M., Wurzinger, H.D., Maier, H. et al. N-type PbS and PbS1−x Se x layers prepared by the hot-wall epitaxy. J Mater Sci 12, 317–322 (1977). https://doi.org/10.1007/BF00566273

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  • DOI: https://doi.org/10.1007/BF00566273

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