Abstract
A technique is described for the local indium doping of epitaxial films of a p-type PbSnTe solid solution to obtain a metal-insulator transition at liquid-helium temperatures. The indium was diffused from the surface of the film, from an In layer several nanometers thick, whereas the shape and size of the doped layer were set by a mask. It is emphasized that the oxide layer should be removed before indium deposition, and that the thickness of the deposited indium layer should be precisely chosen based on the thickness of the PbSnTe film. The results of using this technique for films having different compositions and the results of measurements performed on a planar p-i-p structure are considered.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Ovsyuk, V.N. et al., Matrichnye fotopriemnye ustroistva infrakrasnogo diapazona (Matrix Photodetectors for Infrared Range), Novosibirsk: Nauka, 2001, pp. 308–372.
Khokhlov, D.R., High-sensitivity terahertz radiation detectors based on a new class of semiconductor materials, Phys. Usp., 2006, vol. 49, no. 9, pp. 955–959.
Neizvestny, I.G., Klimov, A.E., and Shumsky, V.N., Photon far-infrared and submillimeter array detectors, Phys. Usp., 2006, vol. 49, no. 9, pp. 952–962.
Klimov, A.E., Krivopalov, D.V., Neizvestnyi, I.G., Shumsky, V.N., Petikov, N.I., Torlin, M.A., and Fedosenko, E.V., Surface LLT—film structure with in doping, Appl. Surf. Sci., 1994, vol. 78, no. 4, pp. 413–420.
Vasil’eva, L.F., Klimov, A.E., Petikov, N.I., and Shumskii, V.N., Effect of low-temperature diffusion annealing on the properties of PbSnTe<In> epilayers, Inorg. Mater., 2001, vol. 37, no. 2, pp. 144–148.
Akimov, A.N., Ishchenko, D.V., Klimov, A.E., Neizvestny, I.G., Pashchin, N.S., Sherstyakova, V.N., and Shumsky, V.N., Effect of the material of injecting contacts on the CVCs of Pb1–x Sn x Te:In films, Russ. Microelectron., 2013, vol. 42, no. 2, pp. 63–67.
Anderson, W.W., Gain-frequency-current relation for Pb1–x Sn x Te double heterostructure lasers, IEEE J. Quantum Electron., 1977, vol. 13, no. 7, pp. 532–543.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © D.V. Ishchenko, B.M. Kuchumov, 2017, published in Mikroelektronika, 2017, Vol. 46, No. 4.
Rights and permissions
About this article
Cite this article
Ishchenko, D.V., Kuchumov, B.M. A technique for the local doping and correction of the conductivity of PbSnTe epitaxial layers via indium diffusion from superficial nanometer-thick films. Russ Microelectron 46, 277–281 (2017). https://doi.org/10.1134/S1063739717040047
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063739717040047