Skip to main content
SpringerLink
Log in

Scanning electron microscope EBIC and CL micrographs of dislocations in GaP

  • Papers
  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

The SEM EBIC (or charge collection) method using a surface Schottky barrier was applied to GaP specimens to obtain dark spot micrographs revealing dislocations present in the specimens. We describe the experimental procedures and electron probe parameters necessary to obtain such micrographs for specimens ranging from LEC substrate material to doped and undoped VPE layers, and compare the results obtained with analogous results for the SEM CL method. A one-to-one correspondence between the dark spots in corresponding EBIC and CL micrographs was demonstrated. Factors affecting the spatial resolution of the micrographs are discussed; a best resolution of ∼ 1μm was obtained.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. W. A. Brantley, O. G. Lorimer, P. D. Dapkus, S. E. Haszko andR. H. Saul,J. Appl. Phys. 46 (1975) 2629.

    Google Scholar 

  2. G. B. Stringfellow, P. F. Lindquist, T. R. Cass andR. A. Burmeister,J. Electron Mater. 3 (1974) 497.

    Google Scholar 

  3. J. L. Richards andA. J. Crocker,J. Appl. Phys. 31 (1960) 611.

    Google Scholar 

  4. M. S. Abrahams andC. J. Buiocchi,ibid. 36 (1965) 2855.

    Google Scholar 

  5. T. J. Hayes, A. Rasul andS. M. Davidson,J. Electron Mater. 5 (1976) 351.

    Google Scholar 

  6. R. M. Gibb andP. D. Augustus ibid 5 (1976) 585.

    Google Scholar 

  7. S. M. Davidson, M. Z. Iqbal andD. C. Northrop,Phys. Stat. Solidus 29 (1975) 571.

    Google Scholar 

  8. C. Schiller andM. Boulou,Philips Tec. Rev. 35 (1975) 239.

    Google Scholar 

  9. J. M. Titchmarsh, W. Harding, G. R. Booker andD. R. Wight,J. Mater. Sci. 12 (1977) 341.

    Google Scholar 

  10. W. Czaja andJ. R. Patel,J. Appl. Phys. 36 (1965) 1476.

    Google Scholar 

  11. H. J. Leamy, L. C. Kimerling andS. D. Ferris, “Scanning Electron Microscopy/1976” (Part IV) (IIT Research Institute, Chicago, 1976) p. 529.

    Google Scholar 

  12. R. J. Woolf, D. Phil. Thesis, University of Oxford (1972).

  13. J. Palolil, D. Phil. Thesis, University of Oxford (in preparation);J. Palolil, D. B. Darby, G. R. Booker, R. M. Gibb, P. H. Augustus andD. J. Stirland, “Materials and Processing Effects in Semiconductor Devices” presented at Conference Sussex University, March 1976 (Inst. of Phys.).

Download references

Author information

Authors and Affiliations

  1. Department of Metallurgy and Science of Materials, University of Oxford, UK

    D. B. Darby & G. R. Booker

Authors
  1. D. B. Darby
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. R. Booker
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Darby, D.B., Booker, G.R. Scanning electron microscope EBIC and CL micrographs of dislocations in GaP. J Mater Sci 12, 1827–1833 (1977). https://doi.org/10.1007/BF00566242

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00566242

Keywords

Search

Navigation