Abstract
Electron spin resonance measurements show a reduction in the spin density associated with unpaired electron dangling bonds of a mixed complex of co-evaporated GeO2/SiO x films compared with that of SiO x films investigated under similar conditions. Unlike the behaviour of BaO/GeO2 complex films, these samples show a decrease in the optical gap as the thickness increases for films of fixed compositions. However, it increases as the SiO percentage increases in films of the same thickness. D.C. measurements at low applied fields below 105 V cm−1 agree well with the spin density results.
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Arshak, K.I., Al-Ramadhan, F.A.S. & Hogarth, C.A. Electron spin resonance and some electrical and optical properties of GeO2/SiO x thin films. J Mater Sci 19, 1505–1509 (1984). https://doi.org/10.1007/BF00563045
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DOI: https://doi.org/10.1007/BF00563045