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Properties of PbS1−x Se x epilayers deposited onto PbS substrates by hot-wall epitaxy

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Properties of PbS1−x Se x , epilayers deposited onto PbS substrates by hot-wall epitaxy (HWE) have been investigated. By compensating with a secondary selenium vapour source, both n- and p-type epilayers with carrier concentrations up to 1018 cm−3 have been obtained. Alloy compositions were determined using an X-ray method and found to be dependent upon the selenium furnace temperatures used during growth. Diodes were fabricated from wafers consisting of n-type substrates and p-type PbS1−x Se x epilayers of various compositions. Typical R 0 A products are 5 ω cm2 for x=0.70. Microprobe analysis indicated that the junctions are abrupt. Diode properties were found to be strongly dependent upon the qualities of the substrates used for epitaxy deposition.

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Authors and Affiliations

  1. AEG-Telefunken Forschungsinstitut, D-6000, Frankfurt am Main 71, Germany

    K. Duh & H. Preier

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  1. K. Duh
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  2. H. Preier
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Duh, K., Preier, H. Properties of PbS1−x Se x epilayers deposited onto PbS substrates by hot-wall epitaxy. J Mater Sci 10, 1360–1366 (1975). https://doi.org/10.1007/BF00540826

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  • DOI: https://doi.org/10.1007/BF00540826

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