Abstract
The processes of the plasma sputtering of epitaxial lead-tin selenide films near the sputtering threshold are studied. Pb1 – xSnxSe films (x = 0.03, 0.07) with a thickness of 0.5–2 microns are grown by molecular-beam epitaxy on CaF2/Si(111) substrates. The films are plasma treated with radio-frequency high-density low-pressure inductively coupled argon plasma with an ion energy of 20–25 eV at typical process times of 60–360 s. As a result of plasma treatment for a prolonged period, the formation of hollow metal particles of nano- and submicron sizes is observed on the surface. Using scanning electron microscopy methods, it is shown that the lateral dimensions of the obtained structures, their shape and surface density vary over wide ranges and significantly depend on the time of plasma sputtering. The features of plasma sputtering for the studied films and films of a binary compound of lead selenide are compared.
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FUNDING
The work was carried out as part of the state task of Valiev Nuclear Physics Institute, Russian Academy of Sciences, project no. 0066-2019-0002 and in the framework of the initiative research of Yaroslavl State University AAAA-A16-116070610023-3. The SEM studies were carried out at the Center for Collective Usage “Diagnostic Microstructures and Nanostructures”, with financial support from the Ministry of Education and Science of the Russian Federation. We are grateful to Hans Zogg, ETH, Zurich for the provided Pb1 – xSnxSe/CaF2/Si(111) film samples.
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Zimin, S.P., Amirov, I.I., Naumov, V.V. et al. Surface Modification of Pb1 – xSnxSe Films during Plasma Treatment Near the Sputtering Threshold. J. Surf. Investig. 14, 1174–1178 (2020). https://doi.org/10.1134/S1027451020050213
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DOI: https://doi.org/10.1134/S1027451020050213