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Growth and melting behaviour of thin in films on Ge(100)

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Abstract

Growth and melting behaviour of thin indium films on Ge(100) have been investigated by Auger-electron spectroscopy (AES), atomic force microscopy (AFM) and perturbed γγ angular correlation (PAC) spectroscopy, respectively. At room temperature inidium is found to grow in three-dimensional islands even at submonolayer coverages. A very rough film surface is observed for thicknesses up to 230 ML. The melting behaviour of such films has been studied by PAC. A reduction of the melting temperature T m as well as a strong supercooling of the films is observed. The electric field gradient for 111In(111Cd) in the indium islands is determined as a function of temperature and is used to monitor the local crystalline order of the films up to temperatures just below the melting point.

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Authors and Affiliations

  1. Fakultät für Physik, Universität Konstanz, W-7750, Konstanz, Fed. Rep. Germany

    G. Krausch, T. Detzel, H. Bielefeldt, R. Fink, B. Luckscheiter, R. Platzer, U. Wöhrmann & G. Schatz

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  1. G. Krausch
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  2. T. Detzel
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  3. H. Bielefeldt
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  4. R. Fink
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  5. B. Luckscheiter
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  6. R. Platzer
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  7. U. Wöhrmann
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  8. G. Schatz
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Krausch, G., Detzel, T., Bielefeldt, H. et al. Growth and melting behaviour of thin in films on Ge(100). Appl. Phys. A 53, 324–329 (1991). https://doi.org/10.1007/BF00357195

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  • DOI: https://doi.org/10.1007/BF00357195

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