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Growth and characterization of SnSe2

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Abstract

Tin diselenide single crystals were grown by direct synthesis using the Bridgman technique and were subsequently purified by successive recrystallizations. An X-ray powder diffraction study verified that the crystals obtained belong to the D 33d — P¯3m1 space group with lattice parameters a=0.3811 nm and c=0.6137 nm. A stoichiometric analysis gave a maximum deviation of their nominal SnSe2 composition of ∼ 4%. Study of their morphology by scanning electron microscopy reveals the layered-type structure of the obtained material. Finally, the microhardness parallel and perpendicular to the layer planes was found to be strongly anisotropic, as expected from the layered structure of SnSe2.

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Authors and Affiliations

  1. Faculty of Physics, St. Kliment Ohridski University of Sofia, 1126, Sofia, Bulgaria

    E. Trifonova & I. Y. Yanchev

  2. Solid State Physics Section 313-1, Physics Department, Aristotle University of Thessaloniki, 54006, Thessaloniki, Greece

    P. Manou, K. Kambas & A. N. Anagnostopoulos

Authors
  1. E. Trifonova
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  2. I. Y. Yanchev
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  3. P. Manou
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  4. K. Kambas
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  5. A. N. Anagnostopoulos
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Trifonova, E., Yanchev, I.Y., Manou, P. et al. Growth and characterization of SnSe2 . JOURNAL OF MATERIALS SCIENCE 31, 3647–3649 (1996). https://doi.org/10.1007/BF00352773

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  • DOI: https://doi.org/10.1007/BF00352773

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