Abstract
A new method for the determination of surface states in amorphous silicon films is proposed. The method is based on the observation of enhancement of the interference fringe amplitude in photothermal deflection spectra, due to the presence of surface states.
A theoretical approach is presented, together with the experimental results and an evaluation of the density of surface states. The method proves to be adequate, in most cases, to yield results in good agreement with those reported in literature.
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References
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