Abstract
We introduce quantitative investigation of initial oxidation process on Si(001)-(2x1) by means of linear optical spectroscopic methods, namely, surface differential reflectance spectroscopy and reflectance difference spectroscopy. Our recent results obtained with these real-time measurement techniques revealed that the transition between two different oxide growth modes, Langmuir-type adsorption and two - dimensional island growth, could be identified. The activation energies were estimated from Arrhenius plots of the oxidation periods for the growth of an oxide mono layer. Our results suggest that a finite activation energy exists for monolayer oxide formation on Si(001)-(2x1) at high temperatures.
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Ohno, Sy., Shudo, Ki., Tanaka, M. (2014). Real-Time Analysis of Initial Oxidation Process on Si(001) by Means of Surface Differential Reflectance Spectroscopy and Reflectance Difference Spectroscopy. In: Shudo, Ki., Katayama, I., Ohno, SY. (eds) Frontiers in Optical Methods. Springer Series in Optical Sciences, vol 180. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-40594-5_2
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