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Off-axis electron holography of hetero-interfaces

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Interface Science

Abstract

Off-axis electron holography is one of the new emerging methods for high spatial resolution characterization of interfaces in materials. It enables recording and retrieval of both amplitude and phase of an electron wavefunction scattered by a specimen. Phase changes introduced by magnetic and electrostatic fields have been studied in the first applications of electron holography to domain walls in ferromagnetic and ferroelectric materials and to p-n junctions. Planar defects in single crystals, such as stacking faults, have been observed with strong phase contrast due to dynamical diffraction.

Applications to heterogeneous interfaces have only started. High phase contrast due to mean inner potential differences is found for interfaces between high and low atomic number materials. Dynamical contributions to the phase of the transmitted beam are important for epitaxial interfaces in strongly diffracting orientations. Numerical hologram reconstructions yield quantitative amplitude and phase images of an interface which are energy filtered and are in perfect registry. Both are function of specimen thickness. The thickness dependence can be eliminated by division of the phase image with a logarithm of the amplitude image. This ratio maps the product of the mean inner potential and the mean free path for inelastic scattering across a hetero-interface in weekly diffracting orientations.

Resolution enhancement through aberration correction has not been demonstrated for interfaces as yet. Holography of interfaces in plan view is unexplored.

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Authors and Affiliations

  1. Department of Physics and Laboratory for Surface Studies, University of Wisconsin Milwaukee, P.O. Box 413, 53201, Milwaukee, WI, USA

    M. Gajdardziska-Josifovska

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  1. M. Gajdardziska-Josifovska
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Gajdardziska-Josifovska, M. Off-axis electron holography of hetero-interfaces. Interface Sci 2, 425–440 (1995). https://doi.org/10.1007/BF00222627

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