Synthesis, Characterization of Hybrid Nanomaterials of Strontium, Yttrium, Copper Doped with Indole Schiff Base Derivatives Possessing Dielectric and Semiconductor Properties

Abstract

Objective: A set of different nanocomposite hybrid materials of Sr_0.5 Y_0.1 Cu_0.3 has been synthesized through co-precipitation synthetic method using Cetyl Trimethyl Ammonium Bromide (CTAB) and Tri ethyl amine (TEA) as surfactants. The different derivatives of indole Schiff base compounds (5a–5e) were doped to the nanocomposites in molar ratio of 1–2%. The entire hybrid material isolated by forming gelatinous network and calcinated. The hybrid nanomaterials were investigated for their semiconductor and dielectric properties. Method: Nanocompositional hybrid materials were prepared by co-precipitation method with the composition of Sr_0.5 Y_0.1 Cu_0.3 with doping of indole Schiff base derivative (ISB) of molar ratio 1–2%, and the reduction is done using surface reduction methods gelated precipitate of hybrid nanomaterials were calcinated, characterized by XRD, FT-IR, UV–Vis and SEM spectroscopic techniques. The semiconductor and dielectric properties of pelletalized samples were measured with respect to various temperatures and frequency. The precursor material used for the synthesis is strontium carbonate, yttrium oxide and cuprous chloride which are reduced in presence of CTAB and urea. After isolating the hybrid materials ISB derivatives (5a–5e) were doped and the aqueous mixture of bluish-reddish precipitate was filtered, washed with ethyl alcohol and octanol mixture to remove any impurities present with the precipitate, dried at 50–120 °C, heat treated at 650–750 °C and obtained pure nanocomposite. Findings: Initial spectroscopic studies showed that grain size of copper was 20–30 nm in diameter. XRD pattern demonstrated the formation of trigonal copper and dopant addition considerably affects the crystal structure. The dielectric constant were measured and compared with undoped hybrid material. The band alignment and band gap obtained from the ISB material was further felicitating the fissile ejection of the electrons and ensuring the semiconductor properties of the materials.