Abstract
The Knoop microhardness values of the Group IV B elements, of SiC, the III–V compounds and of softie II–VI compounds follow Goldschmidt’s relation H=const.× r −m, where H is the Knoop number, r the interatomic distance and m a constant. For the elements and SiC, m is close to 5 and for the III–V compounds, m is about 9. Similar relationships have been found for the optical gap width and for the melting point of these materials. The results will be discussed in terms of the lattive energy and the character of the chemical bonding.
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References
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© 1958 Springer Fachmedien Wiesbaden
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Wolff, G.A., Toman, L., Field, N.J., Clark, J.C. (1958). Relationship of Hardness, Energy Gap and Melting Point of Diamond Type and Related Structures. In: Schön, M., Welker, H. (eds) Halbleiter und Phosphore / Semiconductors and Phosphors / Semiconducteurs et Phosphores. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-663-02557-3_49
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DOI: https://doi.org/10.1007/978-3-663-02557-3_49
Publisher Name: Vieweg+Teubner Verlag, Wiesbaden
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