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Cyclotron Resonance in n-GaAs/GaAlAs Heterojunction

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High Magnetic Fields in Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 71))

Abstract

We report on cyclotron resonance experiments of inversion electrons in high mobility GaAs/GaAlAs heterojunctions in a wide range of magnetic fields B and temperatures T with special emphasis on saturation effects and subband nonparabolicity. The experiments have been performed with a Fourier spectrometer (BC12T) and a far-infrared laser (B>12T).

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Author information

Authors and Affiliations

  1. Institut für Angewandte Physik, D-2000, Hamburg 36, Fed. Rep. of Germany

    F. Thiele, W. Hansen, M. Horst, J. P. Kotthaus, U. Merkt & A. D. Wieck

  2. Hochfeldlabor des Max-Planck-Institut für Festkörperforschung, F-38042, Grenoble, France

    J. C. Maan & A. D. Wieck

  3. Max-Planck-Institut für Festkörperforschung, D-7000, Stuttgart 80, Fed. Rep. of Germany

    K. Ploog

  4. Forschungsinstitut der Deutschen Bundespost, D-6100, Darmstadt, Fed. Rep. of Germany

    G. Weimann

Authors
  1. F. Thiele
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  2. W. Hansen
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  3. M. Horst
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  4. J. P. Kotthaus
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  5. J. C. Maan
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  6. U. Merkt
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  7. K. Ploog
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  8. G. Weimann
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  9. A. D. Wieck
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, Röntgenring 8, D-8700, Würzburg, Fed. Rep.of Germany

    Gottfried Landwehr

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© 1987 Springer-Verlag Berlin Heidelberg

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Thiele, F. et al. (1987). Cyclotron Resonance in n-GaAs/GaAlAs Heterojunction. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_36

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  • DOI: https://doi.org/10.1007/978-3-642-83114-0_36

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83116-4

  • Online ISBN: 978-3-642-83114-0

  • eBook Packages: Springer Book Archive

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