Abstract
We wish to extend a warm welcome to all of you for attending and supporting this meeting. Without your interest and urging, this conference would not have taken place. In particular, we would like to thank John Cleland and Dick Wood of Oak Ridge National Laboratory for hosting the first NTD Conference and for suggesting that a second conference be held at the University of Missouri. Our sincere appreciation extends also to the Monsanto Corporation, the conference catalyst in the early planning stages, both financially and otherwise We also thank the Air Force Office of Scientific Research and the Office of Naval Research for their encouragement and support and Rockwell International who supported the publishing of the abstracts.
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References
D. E. Cullen and P. J. Hlavac, ENDF/B Cross Sections, Brookhaven National Laboratory, Upton, N. Y.,(1972).
M. Tanenbaum and A. D. Mills, J. Electrochem. Soc. 108, 171 (1961).
D. S. Billington and J. H. Crawford, Jr., Radiation Damage in Solids, Princeton University Press, Princeton, N. J., (1961), Chapter 2.
M. V. Chukichev and V. S. Vavilov, Sov. Phys. Solid State 3, 1103 (1961).
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© 1979 Plenum Press, New York
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Meese, J.M. (1979). The NTD Process—A New Reactor Technology. In: Meese, J.M. (eds) Neutron Transmutation Doping in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8249-2_1
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DOI: https://doi.org/10.1007/978-1-4684-8249-2_1
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-8251-5
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