Neutron Transmutation Doping in Semiconductors

1. Front Matter

   Pages i-x

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2. Introduction

   1. The NTD Process—A New Reactor Technology

      • J. M. Meese

      Pages 1-10

3. Radioactivity and Radiation Protection

   1. Detection and Identification of Potential Impurities Activated by Neutron Irradiation of Czochralski Silicon

      • Bobbie D. Stone, Donald B. Hines, Steve L. Gunn, David McKown

      Pages 11-26

   2. Nuclear Transmutation Doping from the Viewpoint of Radioactivity Formation

      • E. W. Haas, J. A. Martin

      Pages 27-36

4. NTD Device Applications And Device Physics

   1. Application of NTD Silicon for Power Devices

      • Hans Mork Janus

      Pages 37-45

   2. The Advantages of NTD Silicon for High Power Semiconductor Devices

      • Roger W. Phillips

      Pages 47-52

   3. NTD Silicon on High Power Devices

      • C. K. Chu, J. E. Johnson

      Pages 53-63

   4. Role of Neutron Transmutation in the Development of High Sensitivity Extrinsic Silicon IR Detector Material

      • H. M. Hobgood, T. T. Braggins, J. C. Swartz, R. N. Thomas

      Pages 65-90

   5. Study of the Spatial Characteristics of the Breakdown Process in Silicon PN-Junctions

      • Gerald C. Huth, Boris L. Hikin, Vladimir Rodov

      Pages 91-108

   6. Resistivity Fluctuations in Highly Compensated NTD Silicon

      • J. M. Meese, Paul J. Glairon

      Pages 109-128

   7. Transistor Gain Trimming in I2L Integrated Circuits Using the NTD Process

      • E. J. Caine, P. J. Glairon, E. J. Charlson, E. M. Charlson

      Pages 129-141

5. Reactor Facilities for Transmutation Doping

   1. Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-Energy Distributions for Materials Irradiated in the Low Temperature Fast-Neutron Facility in CP-5

      • M. A. Kirk, L. R. Greenwood

      Pages 143-155

   2. Neutron Doping of Silicon in the Harwell Research Reactors

      • T. G. G. Smith

      Pages 157-163

   3. Silicon Irradiation Facilities at the NBS Reactor

      • N. A. Bickford, R. F. Fleming

      Pages 165-170

   4. General Electric Test Reactor NTD Silicon Development Program

      • J. E. Morrissey, T. Tillinghast, A. P. Ferro, B. J. Baliga

      Pages 171-179

   5. An Automated Irradiation Facility for Neutron Doping of Large Silicon Ingots

      • J. L. Bourdon, G. Restelli

      Pages 181-195

   6. High Precision Irradiation Techniques for NTD Silicon at the University of Missouri Research Reactor

      • S. L. Gunn, J. M. Meese, D. M. Alger

      Pages 197-214

   7. A Computer Controlled Irradiation System for the University of Missouri Research Reactor

      • R. Berliner, S. Wood

      Pages 215-228

6. Basic Processes—Radiation Damage and Dopant Production

   1. Atomic Displacement Effects in Neutron Transmutation Doping

      • H. J. Stein

      Pages 229-248

   2. The Minority Carrier Lifetime of Neutron Doped Silicon

      • Olof Malmros

      Pages 249-259

This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con­ ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna­ tional in scope.

• Potential
• circuit
• computer
• energy
• industry
• integrated circuit
• material
• processing
• radiation
• resonance
• semiconductors
• silicon
• solid
• testing
• transistor

• University of Missouri, Columbia, USA

  Jon M. Meese

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