Abstract
The basic ideas concerning time-of-flight techniques (ToF) as applied to the study of transport phenomena in semiconductors were first presented by Haynes and Shockley (1951) in their pioneer experi ments. The most important quantity which results as output of the measurement is the value of the transit time TR, that is the time taken by the charge carriers to travel across a given region of the sample under the influence of a known electric field. Thus, the ToF technique is usually synonymous with transit-time measurements.
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© 1980 Plenum Press, New York
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Reggiani, L. (1980). Time-of-Flight Techniques. In: Ferry, D.K., Barker, J.R., Jacoboni, C. (eds) Physics of Nonlinear Transport in Semiconductors. NATO Advanced Study Institutes Series, vol 52. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3638-9_9
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