Abstract
Reflection electron microscopy (REM) is now well established as a technique for the study of the structure of surfaces of crystals. Resolutions of better than 1 nm are possible and clear images can be obtained of surface steps 0.1 to 0.2 nm high. The image intensities are influenced only by the top few layers of atoms, and surface layers consisting of a fraction of a monolayer of foreign atoms can give high contrast. The images may be correlated with data from diffraction patterns from the surface and with microanalysis of the surface performed by use of electron energy loss spectroscopy (EELS) and, sometimes, Auger electron spectroscopy (AES). When the images are obtained in the scanning mode, with an electron beam of small diameter focussed on the specimen, the diffraction and microanalysis data may be obtained from very small regions of the surface. In this chapter, we give accounts of the current status of the techniques involved and of some recent applications.
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Cowley, J.M. (1988). Reflection Electron Microscopy. In: Howie, A., Valdrè, U. (eds) Surface and Interface Characterization by Electron Optical Methods. NATO ASI Series, vol 16. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-9537-3_9
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DOI: https://doi.org/10.1007/978-1-4615-9537-3_9
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