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2D-subbands in III–V and narrow-gap semiconductors

  • 3. Two-Dimensional Systems
  • Conference paper
  • First Online:
Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

Abstract

Theoretical calculations of 2D-subband are made for n-channel of InSb in comparison with the observed carrier concentrations in each subband, cyclotron masses and optical absorption spectra. The similar calculations are also made for the n-channel of Hg1−xCdxTe. The physical back grounds of the results are discussed emphasizingly.

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References

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Author notes

  1. Y. Takada

    Present address: Department of Physics, Purdue University, Lafayette, Indiana, USA

  2. K. Arai

    Present address: Musashino Electric Communication Lab., NTT, 3-9.-11, Midori-cho, Musashino, 180, Tokyo, Japan

Authors and Affiliations

  1. Department of Physics, University of Tokyo Bunkyo-ku, 113, Tokyo, Japan

    Y. Takada, K. Arai & Y. Uemura

Authors
  1. Y. Takada
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  2. K. Arai
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  3. Y. Uemura
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Editor information

E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Takada, Y., Arai, K., Uemura, Y. (1982). 2D-subbands in III–V and narrow-gap semiconductors. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_16

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  • DOI: https://doi.org/10.1007/3-540-11191-3_16

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11191-7

  • Online ISBN: 978-3-540-38978-1

  • eBook Packages: Springer Book Archive

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