Abstract
The results of studying the diffusion of Cr impurity in GaAs according to electrical measurements are reported. Dependences of the diffusion coefficient and limiting solubility of electrically active Cr atoms in GaAs on temperature (at fixed pressures of As vapors) and on the pressure of As vapors (at fixed temperatures) are determined. The dependence of the Cr diffusion coefficient in GaAs on the ratio between the volume of the sample under study to the volume of the cell in the case of pronounced deviation from the crystal’s stoichiometry towards Ga excess is established. The obtained experimental data are analyzed on the basis of concepts concerning the dissociative mechanism of migration of Cr atoms in the GaAs crystal lattice; according to this mechanism, the diffusion coefficient depends heavily on the concentration of Ga vacancies.
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S. S. Khludkov, Vestn. Tomsk. Gos. Univ., Ser. Fiz., No. 285, 84 (2005).
S. S. Khludkov, G. A. Prikhod’ko, and T. N. Karelina. Izv. Akad. Nauk SSSR, Neorg. Mater. 8, 1044 (1972).
N. C. Casey, in Atomic Diffusion in Semiconductors, Ed. by D. Shaw (Plenum, London, 1973; Mir, Moscow, 1975).
N. V. Gontar’, L. B. Gorodnik, A. V. Emel’yanov, et al., in Properties of Doped Semiconductors (Nauka, Moscow, 1977), p. 31 [in Russian].
B. Tuck and A. Adegboyega, J. Phys. D: Appl. Phys. 12, 1895 (1979).
J. Kasahara and N. Watanabe, Jpn. J. Appl. Phys. 19(3), L15 (1980).
M. D. Deal and D. A. Stevenson, J. Appl. Phys. 59, 2398 (1986).
S. S. Khludkov, O. B. Koretskaya, and A. V. Tyazhev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 274 (2004) [Semiconductors 38, 262 (2004)].
S. S. Khludkov, O. B. Koretskaya, and G. R. Burnasheva, Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 1025 (2006) [Semiconductors 40, 999 (2006)].
S. S. Khludkov, O. B. Koretskaya, I. A. Prudaev, and G. R. Burnasheva, in Proceedings of 9th Conference on Gallium Arsenide and III–V Semiconductor Compounds (Tomsk, Russia, 2006), p. 108.
M. D. Deal, R. A. Gasser, and D. A. Stevenson, J. Phys. Chem. Solids 46, 859 (1985).
H. R. Potts and G. L. Pearson, J. Appl. Phys. 37, 2098 (1966).
V. I. Fistul’, V. I. Petrovskiĭ, N. S. Rytova, and P.M. Grinshteĭn, Fiz. Tekh. Poluprovodn. (Leningrad) 13, 1402 (1979) [Sov. Phys. Semicond. 13, 820 (1979)].
S. J. Chiang and G. L. Pearson, J. Appl. Phys. 46, 2986 (1975).
R. Arthur, J. Phys. Chem. Solids 28, 2257 (1967).
F. S. Frank and D. Turnbull, Phys. Rev. 104, 617 (1956).
B. I. Boltaks, Diffusion and Point Defects in Semiconductors (Nauka, Leningrad, 1972) [in Russian].
T. D. Dzhafarov, Defects and Diffusion in Epitaxial Structures (Nauka, Leningrad, 1978) [in Russian].
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Original Russian Text © S.S. Khludkov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 3, pp. 378–382.
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Khludkov, S.S. Effect of the state of vacancy equilibrium on diffusion of chromium impurity in gallium arsenide. Semiconductors 42, 370–374 (2008). https://doi.org/10.1134/S106378260803024X
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DOI: https://doi.org/10.1134/S106378260803024X