Abstract
We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 μm, including red part of the visible spectrum. Emission properties of individual QDs are investigated by micro-photoluminescence (μ-PL) spectroscopy using 500-nm-size etched mesa structures. Autocorrelation functions of photons from single QDs, measured in the wide spectral range demonstrate antibunching effect at zero delay time with a value of g(2)(0) ~ 0.17 that is a clear evidence of non-classical light.
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Rakhlin, M.V., Belyaev, K.G., Klimko, G.V. et al. Red Single-Photon Emission from InAs/AlGaAs Quantum Dots. Semiconductors 52, 511–513 (2018). https://doi.org/10.1134/S1063782618040243
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DOI: https://doi.org/10.1134/S1063782618040243