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Morphology and Structural Properties of AlGaInSbAs Epitaxial Films Grown on InAs Substrates

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Abstract

The influence of the growth conditions on the surface morphology and structural properties of AlGaInSbAs solid solutions obtained on indium-arsenide substrates is discussed. The optimal parameters of the growth process (T < 873 K, G ≤ 60 K/cm, l > 80 μm) of isoperiodic AlGaInSbAs films on InAs substrates with high structural perfection BH/2 < 30″ and a surface roughness of less than 12 nm are determined. The effect of the composition of the epitaxial AlGaInSbAs films on the mismatch between the lattice periods of the InAs film and substrate is studied. It is shown that the lattice mismatch between the film and the substrate increases with an increase in gallium in the AlxGayIn1–x–ySbzAs1–z solid solution and reaches a value of Δa = 1.8 × 10–2 Å. In the case of a change in the concentration of antimony, the lattice mismatch reaches a value of Δa = 7.2 × 10–3 Å at z = 0.5 molar fraction.

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REFERENCES

  1. S. Adachi, Properties of Semiconductor Alloys: Group-IV, III–V and II–VI Semiconductors (Wiley, Chippenham, 2009).

    Book  Google Scholar 

  2. H. Sugiyama, K. Uchida, X. Han, G. K. Periyanayagam, M. Aikawa, N. Hayasaka, and K. Shimomura, J. Cryst. Growth 507, 93 (2019). https://doi.org/10.1016/j.jcrysgro.2018.10.024

    Article  CAS  Google Scholar 

  3. J. S. Ng and C. H. Tan, 2018 IEEE Photonics Conference (IPC) (Reston, VA, 2018), p. 1. https://doi.org/10.1109/IPCon.2018.8527084

  4. N. An, L. Ma, G. Wen, Zh. Liang, H. Zhang, T. Gao, and C. Fan, Appl. Sci. 9, 162 (2019). https://doi.org/10.3390/app9010162

    Article  CAS  Google Scholar 

  5. H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LEDs (Academic, New York, 2012). https://doi.org/10.1016/b978-0-12-426250-8.x5001-5

    Book  Google Scholar 

  6. H.-W. Cheng, Sh.-Ch. Lin, Z.-L. Li, K.-W. Sun, and Ch.-P. Lee, Materials 12, 317 (2019). https://doi.org/10.3390/ma12020317

    Article  CAS  Google Scholar 

  7. V. N. Lozovskii and L. S. Lunin, Five-Component Solid Solutions of A 3 B 5 Sompounds (Sev.-Kavk. Nauchn. Tsentr Vysshei Shkoly, Rostov-on-Don, 1992) [in Russian].

    Google Scholar 

  8. G. Polupan, T. Torchynska, L. G. Vega Macotela, R. Cisneros Tamayo, and A. Escobosa Echavarría, J. Mater. Sci.: Mater Electron. 31, 2643 (2020). https://doi.org/10.1007/s10854-019-02803-x

    Article  CAS  Google Scholar 

  9. Y. Zhang, Q. Wang, X. Zhang, B. Chen, B. Wu, D. Ma, L. Zhang, and Z. Wang, Jpn. J. Appl. Phys. 56, 025501 (2017). doi 10. 7567/JJAP.56.025501

  10. Y. Sun, J. Dong, S. Yu, Y. Zhao, and Y. He, J. Mater. Sci.: Mater Electron. 28, 745 (2017). https://doi.org/10.1007/s10854-016-5585-z

    Article  CAS  Google Scholar 

  11. Ł. Piskorski, L. Frasunkiewicz, and R. P. Sarzała, Bull. Pol. Acad. Sci.: Tech. Sci. 63, 597 (2015). https://doi.org/10.1515/bpasts-2015-0070

    Article  CAS  Google Scholar 

  12. P. V. Seredin, A. S. Lenshin, I. N. Arsentyev, D. A. Vinokurov, T. Prutskij, H. Leiste, M. Rinke, A. V. Glotov, A. S. Lenshin, I. N. Arsentyev, D. A. Vinokurov, T. Prutskij, H. Leiste, and M. Rinke, Semiconductors 48, 21 (2014). https://doi.org/10.1134/S1063782614010217

    Article  CAS  Google Scholar 

  13. T. Torchynska, R. Cisneros-Tamayo, L. Vega-Macotela, G. Polupan, and A. Escobosa-Echavarria, Superlattices Microstruct 124, 153 (2018). https://doi.org/10.1016/j.spmi.2018.10.005

    Article  CAS  Google Scholar 

  14. P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, and I. S. Tarasov, Appl. Surf. Sci. 267, 181 (2013). https://doi.org/10.1016/j.apsusc.2012.09.053

    Article  CAS  Google Scholar 

  15. O. Arif, V. Zannier, A. Li, F. Rossi, D. Ercolani, F. Beltram, and L. Sorba, Cryst. Growth Des. 20, 1088 (2020). https://doi.org/10.1021/acs.cgd.9b01421

    Article  CAS  Google Scholar 

  16. V. A. Solov’ev, M. Y. Chernov, S. V. Morozov, K. E. Kudryavtsev, A. A. Sitnikova, and S. V. Ivanov, JETP Lett. 110, 313 (2019). https://doi.org/10.1134/S0021364019170120

    Article  Google Scholar 

  17. S. Hasan, H. Han, M. Korytov, M. Pantouvaki, J. Van Campenhout, C. Merckling, and W. Vandervorst, J. Cryst. Growth 531, 125342 (2020). https://doi.org/10.1016/j.jcrysgro.2019.125342

    Article  CAS  Google Scholar 

  18. D. L. Alfimova, L. S. Lunin, M. L. Lunina, A. E. Kazakova, and S. N. Chebotarev, Inorg. Mater. 53, 1217 (2017). https://doi.org/10.1134/S0020168517120019

    Article  CAS  Google Scholar 

  19. V. N. Lozovskii, L. S. Lunin, and V. P. Popov, Zone Recrystallization by Temperature Gradient of Semiconductor Materials (Metallurgiya, Moscow, 1987) [in Russian].

    Google Scholar 

  20. S. N. Chebotarev, A. S. Pashchenko, A. Williamson, L. S. Lunin, V. A. Irkha, and V. A. Gamidov, Tech. Phys. Lett. 41, 661 (2015). https://doi.org/10.1134/S1063785015070056

    Article  CAS  Google Scholar 

  21. A. V. Blagin, D. P. Valyukhov, L. S. Lunin, R. V. Pigulev, and I. M. Khabibulin, Inorg. Mater. 44, 793 (2008). https://doi.org/10.1134/S0020168508080013

    Article  CAS  Google Scholar 

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Funding

This study was performed as a part of state assignment no. 01201354240 of the Federal Research Center of the Southern Scientific Centre of the Russian Academy of Sciences, as well as with financial support of the Russian Foundation for Basic Research (grant no. 20-08-00108A).

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Authors and Affiliations

  1. Southern Scientific Centre, Russian Academy of Sciences, 344006, Rostov-on-Don, Russia

    L. S. Lunin, M. L. Lunina, D. L. Alfimova, A. S. Pashchenko & O. S. Pashchenko

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  1. L. S. Lunin
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  2. M. L. Lunina
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  3. D. L. Alfimova
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  4. A. S. Pashchenko
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  5. O. S. Pashchenko
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Correspondence to L. S. Lunin.

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Translated by S. Rostovtseva

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Lunin, L.S., Lunina, M.L., Alfimova, D.L. et al. Morphology and Structural Properties of AlGaInSbAs Epitaxial Films Grown on InAs Substrates. J. Surf. Investig. 15, 441–448 (2021). https://doi.org/10.1134/S1027451021030137

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