Abstract
The results on the growth of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates from the liquid phase in a field of temperature gradient have been discussed. The heterophase equilibria in the Ga–In–P–Sb–As system have been analyzed in the framework of the regular solution model. The kinetics of the growth, the composition, the structural perfection, and the luminescence properties of Ga z In1–z P x SbyAs1–x–y /InAs isoperiodic heterostructures have been investigated.
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Original Russian Text © D.L. Alfimova, L.S. Lunin, M.L. Lunina, A.S. Pashchenko, S.N. Chebotarev, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 9, pp. 1695–1701.
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Alfimova, D.L., Lunin, L.S., Lunina, M.L. et al. Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates. Phys. Solid State 58, 1751–1757 (2016). https://doi.org/10.1134/S1063783416090055
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DOI: https://doi.org/10.1134/S1063783416090055