Abstract
The luminescence spectra of InGaN/AlGaN/GaN p-n heterostructures with reverse bias sufficient for impact ionization are investigated. The injection luminescence of light-emitting diodes with such structures was examined earlier. A strong electric field is present in the InGaN active layer of the heterostructures, and for small reverse bias the tunneling component of the current predominates. Avalanche breakdown commences at voltages V th>8–10 V, i.e., ∼3E g , (E g is the width of the band gap) in the absence of lightly doped structures. The luminescence spectra have a short-wavelength edge corresponding to the width of the GaN band gap (3.40 eV) and maxima in the region 2.60–2.80 eV corresponding to the maxima of the injection luminescence spectra in the active layer. The long-wavelength edge of the spectra in the region 1.7–1.8 eV may be associated with deep recombination levels. Mechanisms of recombination of the hot electron-hole plasma in the strong electric fields of the p-n heterostructures are discussed.
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Fiz. Tekh. Poluprovodn. 32, 63–67 (January 1998)
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Kovalev, A.N., Manyakhin, F.I., Kudryashov, V.E. et al. Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures. Semiconductors 32, 54–57 (1998). https://doi.org/10.1134/1.1187358
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DOI: https://doi.org/10.1134/1.1187358